Method of fabricating polysilicon film by excimer

专利名称：Method of fabricating polysilicon film by

excimer laser annealing process

发明人：Chu-Jung Shih,I-Min Lu申请号：US10248361申请日：20030114公开号：US06740569B2公开日：20040525

专利附图：

摘要：A method of fabricating a polysilicon film by an excimer laser annealing processis introduced. First, an amorphous silicon film is deposited on a substrate composed ofglass. The amorphous silicon film includes a first region, which is located in the center,

with a first thickness, and a second region, which is located in the periphery, with a slantsidewall. The thickness of the amorphous silicon film is measured so as to obtain theprofile of the sidewall in the second region. According to the profile of the sidewall, apre-cursor region is determined for performing an excimer laser annealing processwherein a second thickness in the boundary of the pre-curser regionis smaller than thefirst thickness so as to increase area of produced polysilicon film.

申请人：TOPPOLY OPTOELECTRONICS CORP.

代理人：Winston Hsu

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