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Method for producing a microelectronic device

2023-01-07 来源:九壹网
专利内容由知识产权出版社提供

专利名称:Method for producing a microelectronic

device

发明人:Emmanuel Augendre,Thierry Baron申请号:US14753662申请日:20150629公开号:US09917153B2公开日:20180313

专利附图:

摘要:A crystalline layer is produced from a crystalline substrate made from a firstmaterial on which a masking layer has previously been deposited; the masking layercontaining at least one trench forming an access to the substrate, by:

申请人:Commissariat A L'Energie Atomique et aux Energies Alternatives

地址:Paris FR

国籍:FR

代理机构:Oblon, McClelland, Maier & Neustadt, L.L.P.

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