专利名称：Semiconductor material and method for
forming the same and thin film transistor
发明人：Shunpei Yamazaki,Hongyong Zhang,Naoto
Kusumoto,Yasuhiko Takemura
申请号：US08/183800申请日：19940121公开号：US05962869A公开日：19991005
摘要：A semiconductor material and a method for forming the same, said
semiconductor material having produced by a process comprising melting a noncrystalsemiconductor film containing therein carbon, nitrogen, and oxygen each at aconcentration of 5×10.sup.19 atoms·cm. sup.-3 or lower, preferably 1×10.sup.19atoms·cm.sup.-3 or lower, by irradiating a laser beam or a high intensity light equivalentto a laser beam to said noncrystal semiconductor film, and then recrystallizing the thusmolten amorphous silicon film. The present invention provides thin film semiconductorshaving high mobility at an excellent reproducibility, said semiconductor materials beinguseful for fabricating thin film semiconductor devices such as thin film transistorsimproved in device characteristics.
申请人：SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
代理机构：Sixbey, Friedman, Leedom & Ferguson, PC
代理人：Eric J. Robinson
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