ELECTROSTATIC DISCHARGE PROTECTION STRUCTURES FOR

专利名称：ELECTROSTATIC DISCHARGE PROTECTION

STRUCTURES FOR HIGH SPEED

TECHNOLOGIES WITH MIXED AND ULTRA-LOW VOLTAGE SUPPLIES

发明人：MERGENS, MARCUS,VERHAEGE,

KOEN,ARMER, JOHN,RUSS, CHRISTIAN

申请号：EP02725177申请日：20020315公开号：EP1368874A4公开日：20070228

摘要：An electrostatic discharge (ESD) protection circuit (302) in a semiconductorintegrated circuit (IC) (100) having protected circuitry. In one embodiment, the ESDprotection circuit (302) includes a pad (104), adapted for connection to a protected circuitnode of the IC, and an ESD protection device (306), which is coupled between the pad andground (112). A diode turn-on device (308) is coupled in a forward conduction directionfrom the pad to a first gate (336) of the ESD protection device. In a second embodiment,the ESD protection circuit (2002) is an SCR having an anode (322) coupled to a first voltagesupply line, and a cathode coupled to ground. A parasitic capacitance (2004) is coupledbetween each the voltage supply line and the grounded cathode.

申请人：SARNOFF CORPORATION,SARNOFF EUROPE

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