VISHAYTLHG / R / Y520.
Vishay Semiconductors
High Efficiency LED, ∅ 5 mm Tinted Non-Diffused Package
Description
The TLH.52.. series was developed for standardapplications like general indicating and lighting pur-poses.
It is housed in a 5 mm tinted non-diffused plasticpackage. The small viewing angle of these devicesprovides a high brightness.
Several selection types with different luminous inten-sities are offered. All LEDs are categorized in lumi-nous intensity groups. The green and yellow LEDsare categorized additionally in wavelength groups.That allows users to assemble LEDs with uniformappearance.
19223e2PbPb-freeApplications
Status lights
OFF / ON indicator
Background illuminationReadout lightsMaintenance lightsLegend light
Features
• • • • • • • • •
Choice of three bright colorsStandard T-1¾ package
Small mechanical tolerances
Suitable for DC and high peak currentSmall viewing angle
Luminous intensity categorizedYellow and green color categorizedTLH.52.. with stand-offsLead-free device
Parts Table
Part
TLHR5200TLHR5201TLHR5205TLHY5200TLHY5201TLHY5205TLHG5200TLHG5201TLHG5205
Color, Luminous IntensityRed, IV = 20 mcd (typ.)Red, IV = 30 mcd (typ.)Red, IV = 40 mcd (typ.)Yellow, IV = 30 mcd (typ.)Yellow, IV = 40 mcd (typ.)Yellow, IV = 50 mcd (typ.)Green, IV = 30 mcd (typ.)Green, IV = 40 mcd (typ.)Green, IV = 50 mcd (typ.)
Angle of Half Intensity (±ϕ)14°14°14°14°14°14°14°14°14°
Technology
GaAsP on GaPGaAsP on GaPGaAsP on GaPGaAsP on GaPGaAsP on GaPGaAsP on GaPGaP on GaPGaP on GaPGaP on GaP
Document Number 83011Rev. 1.4, 31-Aug-04
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TLHG / R / Y520.
Vishay SemiconductorsAbsolute Maximum Ratings
Tamb = 25°C, unless otherwise specifiedTLHR52.. , TLHY52.. ,TLHG52.. ,
Parameter
Reverse voltageDC Forward currentSurge forward currentPower dissipationJunction temperatureOperating temperature rangeStorage temperature rangeSoldering temperatureThermal resistance junction/ambient
t ≤ 5 s, 2 mm from bodyTamb ≤ 65°Ctp ≤ 10 µsTamb ≤ 65°C
Test condition
SymbolVRIFIFSMPVTjTambTstgTsdRthJA
Value6301100100- 20 to + 100- 55 to + 100
260350
VISHAYUnitVmAAmW°C°C°C°CK/W
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Red
TLHR52..
Parameter
Luminous intensity 1)
Test condition
IF = 10 mA
PartTLHR5200TLHR5201TLHR5205
Dominant wavelengthPeak wavelengthAngle of half intensityForward voltageReverse voltageJunction capacitance
1)
SymbolIVIVIVλdλpϕVFVRCj
Min101625612
Typ.203040
MaxUnitmcdmcdmcd
IF = 10 mAIF = 10 mAIF = 10 mAIF = 20 mAIR = 10 µAVR = 0, f = 1 MHz
625
635± 142
3
nmnmdegVVpF
61550
in one Packing Unit IVmin/IVmax ≤ 0.5
Yellow
TLHY52..
Parameter
Luminous intensity 1)
Test condition
IF = 10 mA
PartTLHY5200TLHY5201TLHY5205
Dominant wavelengthPeak wavelengthAngle of half intensityForward voltageReverse voltageJunction capacitance
1)
SymbolIVIVIVλdλpϕVFVRCj
Min101625581
Typ.304050
MaxUnitmcdmcdmcd
IF = 10 mAIF = 10 mAIF = 10 mAIF = 20 mAIR = 10 µAVR = 0, f = 1 MHz
594
585± 142.4
3
nmnmdegVVpF
61550
in one Packing Unit IVmin/IVmax ≤ 0.5
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Document Number 83011
Rev. 1.4, 31-Aug-04
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VISHAYGreen
TLHG52..
Parameter
Luminous intensity 1)
Test condition
IF = 10 mA
PartTLHG5200TLHG5201TLHG5205
Dominant wavelengthPeak wavelengthAngle of half intensityForward voltageReverse voltageJunction capacitance
1)
TLHG / R / Y520.
Vishay Semiconductors
SymbolIVIVIVλdλpϕVFVRCj
Min162540562
Typ.304050
MaxUnitmcdmcdmcd
IF = 10 mAIF = 10 mAIF = 10 mAIF = 20 mAIR = 10 µAVR = 0, f = 1 MHz
575
565± 142.4
3
nmnmdegVVpF
61550
in one Packing Unit IVmin/IVmax ≤ 0.5
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
125PV-PowerDissipation(mW)10000Tamb≤85°CIF–ForwardCurrent(mA)10075502500204060801001000tp/T=0.010.020.050.11001100.50.210.0195100250.11101009510918Tamb−AmbientTemperature(°C)tp–PulseLength(ms)Figure1. Power Dissipation vs. Ambient TemperatureFigure3. Forward Current vs. Pulse Length
60IF-ForwardCurrent(mA)0°Ivrel-RelativeLuminousIntensity10°20°30°5040302010001.00.90.80.70.640°50°60°70°80°0.60.40.200.20.42040608010095100449510046Tamb−AmbientTemperature(°C)Figure2. Forward Current vs. Ambient TemperatureFigure4. Rel. Luminous Intensity vs. Angular Displacement
Document Number 83011Rev. 1.4, 31-Aug-04
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TLHG / R / Y520.
Vishay Semiconductors
10Red1000IF-ForwardCurrent(mA)VISHAYRed100tp/T=0.001tp=10µsIvrel-RelativeLuminousIntensity1100.110.1095100260.012468109510029110IF-ForwardCurrent(mA)100VF-ForwardVoltage(V)Figure5. Forward Current vs. Forward VoltageFigure8. Relative Luminous Intensity vs. Forward Current
Ivrel-RelativeLuminousIntensity1.6IVrel-RelativeLuminousIntensityRed1.2Red1.00.80.60.40.2059095100401.20.80.4IF=10mA020406080100Tamb-AmbientTemperature(°C)09510027610630650670690λ-Wavelength(nm)Figure6. Rel. Luminous Intensity vs. Ambient TemperatureFigure9. Relative Intensity vs. Wavelength
2.4IVrel-RelativeLuminousIntensity1000IF-ForwardCurrent(mA)Red2.01.61.20.80.40Yellow100tp/T=0.001tp=10µs1010.1101200.5500.21000.12000.05500IF(mA)0.02tp/T951003002468109510321VF-ForwardVoltage(V)Figure7. Rel. Lumin. Intensity vs. Forw. Current/Duty CycleFigure10. Forward Current vs. Forward Voltage
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Document Number 83011
Rev. 1.4, 31-Aug-04
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VISHAYTLHG / R / Y520.
Vishay Semiconductors
1.2IVrel-RelativeLuminousIntensityIvrel-RelativeLuminousIntensity1.6Yellow1.00.80.60.40.20550Yellow1.20.80.4IF=10mA020406080100Tamb-AmbientTemperature(°C)095100315705906106306509510039λ-Wavelength-(nm)Figure11. Rel. Luminous Intensity vs. Ambient TemperatureFigure14. Relative Intensity vs. Wavelength
Ivrel-RelativeLuminousIntensity2.42.01.61.20.80.40IF-ForwardCurrent(mA)1000YellowGreen100tp/T=0.001tp=10µs101101200.5500.21000.12000.05500IF(mA)0.02tp/T0.1095100342468109510260VF-ForwardVoltage(V)Figure12. Rel. Lumin. Intensity vs. Forw. Current/Duty CycleFigure15. Forward Current vs. Forward Voltage
Ivrel-RelativeLuminousIntensityIvrel-RelativeLuminousIntensity10Yellow11.6Green1.20.80.10.4IF=10mA0.011951003310IF-ForwardCurrent(mA)10095100350020406080100Tamb-AmbientTemperature(°C)Figure13. Relative Luminous Intensity vs. Forward CurrentFigure16. Rel. Luminous Intensity vs. Ambient Temperature
Document Number 83011Rev. 1.4, 31-Aug-04
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TLHG / R / Y520.
Vishay Semiconductors
2.4Ivrel-SpecificLuminousIntensityVISHAY2.01.61.20.80.40Green9510263101200.5500.21000.12000.05500IF(mA)0.02tp/TFigure17. Specific Luminous Intensity vs. Forward Current
Ivrel-RelativeLuminousIntensity10Green10.11951003710IF-ForwardCurrent(mA)100Figure18. Relative Luminous Intensity vs. Forward Current
1.2IVrel-RelativeLuminousIntensity1.00.80.60.40.20520Green5405605806006209510038λ-Wavelength-(nm)Figure19. Relative Intensity vs. Wavelength
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Document Number 83011
Rev. 1.4, 31-Aug-04
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VISHAYPackage Dimensions in mm
TLHG / R / Y520.
Vishay Semiconductors
9511260Document Number 83011Rev. 1.4, 31-Aug-04
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TLHG / R / Y520.
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1.Meet all present and future national and international statutory requirements.
VISHAY2.Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.
1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 83011
Rev. 1.4, 31-Aug-04
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