专利名称：Electrically programmable and erasable
memory device and method of fabricationthereof
发明人：Minh Q. Tran,Minh-Van Ngo,Alexander H.
Nickel,Jeong-Uk Huh
申请号：US12284002申请日：20080917公开号：US08633074B2公开日：20140121
专利附图：
摘要：The present memory device includes a substrate, a tunneling layer over the
substrate, a floating gate over the tunneling layer, a dielectric over the floating gate andincluding silicon oxynitride, and a control gate over the dielectric. A method forfabricating such a memory device is also provided, including various approaches forforming the silicon oxynitride.
申请人：Minh Q. Tran,Minh-Van Ngo,Alexander H. Nickel,Jeong-Uk Huh
地址：Milpitas CA US,Fremont CA US,Santa Clara CA US,Santa Clara CA US
国籍：US,US,US,US
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容