SEMICONDUCTOR DEVICE HAVING AN N-CHANNEL MOS TRANS

专利名称：SEMICONDUCTOR DEVICE HAVING AN N-CHANNEL MOS TRANSISTOR, A P-CHANNELMOS TRANSISTOR AND A CONTRACTINGFILM

发明人：Ryo Tanabe申请号：US13889635申请日：20130508

公开号：US20130244435A1公开日：20130919

专利附图：

摘要：In a second direction, in a plan view, an n-channel MOS transistor and an

expanding film are adjacent. Therefore, the n-channel MOS transistor receives a positivestress in the direction in which a channel length is extended from the expanding film. As aresult, a positive tensile strain in an electron moving direction is generated in a channel ofthe n-channel MOS transistor. On the other hand, in the second direction, in a plan view, ap-channel MOS transistor and the expanding film are shifted from each other. Therefore,the p-channel MOS transistor receives a positive stress in the direction in which a channellength is narrowed from the expanding film. As a result, a positive compressive strain in ahole moving direction is generated in a channel of the p-channel MOS transistor. Thus,both on-currents of the n-channel MOS transistor and the p-channel MOS transistor canbe improved.

申请人：FUJITSU SEMICONDUCTOR LIMITED

地址：Yokohama-shi JP

国籍：JP

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