专利名称：Method of forming a semiconductor device发明人：Anthony K. Stamper申请号：US12201266申请日：20080829公开号：US07674705B2公开日：20100309
专利附图：
摘要：A method of forming a semiconductor device. A first wiring level is formed on atop surface of a substrate. The first wiring level includes alternating layers of a firstdielectric material and a second dielectric material. The layers of the first dielectricmaterial includes at least two layers of the first dielectric material. The layers of the
second dielectric material includes at least two layers of the second dielectric material.The first dielectric material includes an organic dielectric material. The second dielectricmaterial includes an inorganic dielectric material. The substrate includes one or moredielectric materials. A first layer of the layers of the first dielectric material includes theorganic dielectric material being in direct mechanical contact with the substrate. Thelayers of the first dielectric material and the layers of the second dielectric material are asame number of layers.
申请人：Anthony K. Stamper
地址：Williston VT US
国籍：US
代理机构：Schmeiser, Olsen & Watts
代理人：Anthony J. Canale
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