Pseudo dual port memory using a dual port cell and

专利名称：Pseudo dual port memory using a dual port

cell and a single port cell with associatedvalid data bits and related methods

发明人：Harsh Rawat,Piyush Jain申请号：US14573106申请日：20141217公开号：US09311990B1公开日：20160412

专利附图：

摘要：A pseudo dual port memory includes a set of dual port memory cells having aread port and a write port, and configured to store data words in each of a plurality of

addressed locations, and a set of single port memory cells having a read/write port, andconfigured to store data words in each of a plurality of addressed locations. A valid datastorage unit is configured to store valid bits corresponding to the addressed locations ofthe set of dual port memory cells and the set of single port memory cells. Controlcircuitry is configured to access the addressed locations of the set of dual port memorycells and the set of single port memory cells. The control circuitry performs a

simultaneous write operation using the write port of the set of dual port memory cellsand the read/write port of the set of single port memory cells, and updatescorresponding valid bits in the valid data storage unit, and performs a parallel readoperation, at a same addressed location of the set of dual port memory cells and the setof single port memory cells, using the read port of the set of dual port memory cells andthe read/write port of the set of single port memory cells, and determining which storeddata word is valid based upon the corresponding valid bits in the valid data storage unit.

申请人：STMicroelectronics International N.V.

地址：Amsterdam NL

国籍：NL

代理机构：Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.

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